Germany-based Centrotherm has launched the c.Plasma Q Max, a plasma-enhanced chemical vapor deposition (PECVD) tool aimed at manufacturers of tunnel oxide passivated contact (TOPCon) cell technologies, including technologies that upgrade regular passive emitter and rear contact (PERC) cells.
The system is said to be capable of processing up to 10,000 wafers per hour on high-volume TOPCon solar cell production lines. It features a single process chamber that can process three loaded graphite boats in one run.
It enables the formation of ultra-thin tunnel oxide and doped polysilicon (poly-Si) layers, enabling in-situ doping at a deposition rate of 20 nm/min. According to the manufacturer, more than one layer can be deposited in one run by exchanging process gases.
Deposition of typical TOPCon layers, such as silicon nitride (SiNx) and silicon oxide (SiOx), is supported. In addition to the deposition of doped and undoped poly-Si tunnel oxide-polysilicon layers and the deposition of the SiNx capping layer, it can be used for front anti-reflective (AR) coatings over a wide wavelength range.
According to the company, the system does not require replacement of the quartz tube and quartz liner due to the use of an aluminum process chamber. It is compatible with the following wafer sizes: M10, M12, G12R and half cells.
As of 2025, Centrotherm had an installed base of 50 turnkey lines and 4,300 thermal process systems.
This content is copyrighted and may not be reused. If you would like to collaborate with us and reuse some of our content, please contact: editors@pv-magazine.com.
Popular content
