The team produced a reverse 1.08 cm2 perovskite solar cell of 16.53% using atomic layer deposit to install a tinoxide buffering layer to prevent rumor damage.
A research team of the Indian Institute of Technology Bombay has demonstrated an Atomic Layer Deposition (ALD) method within a lower temperature process to apply a buffer layer of thin film from Tinoxide (SNOX) to protect perovskiet and transport layers against damage during the transparent liveable sputing.
Sputtering transparent conductive oxide (TCO) is used to make perovskite tandem and bifacial perovskiet solar cells (PSC) possible. However, sputtering can cause energy-rich particles and ultraviolet (UV) light to damage the underlying perovskite and organic load transport layers.
“The most important focus of the work was the detailed recipe for low temperature atomic layer deposits (ALD) of a SNOX -Interlayer on the Perovskiet/Buckminsterfullerce (C60) Stack at low temperatures to prevent sputter damage,” Dinesh Kabra, corresponding author of the study, confirmed to PV Magazine. ‘These Snox interior layers with an optimal density and thickness is the key for a larger yield. “
Its effectiveness was demonstrated in a reverse 1.08 cm2 perovskiet solar cell that achieved efficiency of 16.53%. In the reverse or pin -structured cell, lighting is due to the gattransport layer (HTL) silk. In the conventional halogene PSC, NIP architecture, the solar cell is illuminated by the electron transport layer (ETL).
In the study, the structural, optical and composition properties of Ald-Snox thin film were investigated as a function of growth parameters. The Ald-Snox film properties were finely tuned by varying the ALD recipes.
Parameters such as deposition temperature, precursor exposure and purge times on the growth agents were optimized.
“The optimization of ALD’s process time facilitates a window to protect the breakdown of underlying thermally sensitive organic layers in PSC,” the scientists said. Het stelde films mogelijk met een hoge gemiddelde transmissie van meer dan 94,8% en 350-1200 nm dikte, een brekingsindex van 1,78 tot 1,95, verwaarloosbare uitstervencoëfficiënt, gevarieerde samenstelling van tinoxide (x = 1,7-1,95), gladde oppervlakken met een ruwheid van 0,18-0,28 nm en hoge massa-dichtheid> 5,6 g/cm3.
“We have successfully reached amorphic, dense, flexible, very transparent and stoichiometric Ald-snox thin films with suitable refractive index values,” the team said.
Then it tested the optimized Snox buffer layer approach in a near-infrared (NIR) transparent reverse PSC. The resulting NIR-transparent Pin-Perovskiet solar cells had a power conversion efficiency of 16.53% based on 1.08 cm2 devices.
The stack was as follows: Glass Substrate, ITO, Me-4Pacz, Perovskite (FA0.83CS0.17PB (I0.8BR0.2) 3), Aluminum Oxide (Al2O3), The 6 Nm Snox Interlayer on Buckminstullerence (C60),), C60),) finger and bus bar.
It was compared to 0.175 cm2 control devices with an opaque stack as follows ITO, ME-4PACZ, Perovskite (FA0.83CS0.17PB (I0.8BR0.2) 3), AL2O3, C60, BCP (6 Nm), AG. To assess the impact of Ald-Snox, they replaced the 6 Nm BCP layer with an ALD Snox layer.
The team concluded that the manufacture of “highly efficient devices offers the paths for bifacial, four-termal and two-terminal tandem cells and opaque surface sun cell technologies.”
The solution found by the IIT was described in the study: “Optimization of the deposition process of atomic layer of thin films of Tinoxide for near-infrared-transparent Halogenide Persovkite solar cells“Published in ACS applied energy materials.
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