Researchers in the US tested the degradation of antimony chalcogenide solar cells exposed to proton radiation. The result indicated robust tolerance and potential for use in space.
Researchers from the University of Toledo and Auburn University in the US have assessed how well antimony chalcogenide-based solar cells can withstand levels of proton radiation at levels typically experienced by solar arrays in space orbit.
Prior to the research, the team noted the potential to use this type of thin-film solar cell technology in future land and space photovoltaic applications. “Antimony chalcogenide-based solar cells have received much attention due to their simple composition, suitable bandgaps, high absorption coefficients, low manufacturing costs and material robustness,” said the study’s corresponding author Alisha Adhikari. pv magazine.
To explore the potential for space, the researchers investigated the proton radiation tolerance of Sb2S3 and Sb2(S, Se)3-based solar cells, exposing them to proton energy at 100 keV and 300 keV for four fluctuations (1011 to 1014 protons/cm2).
The devices were irradiated with protons produced by a 6HDS-2 Tandem National Electrostatics Corporation Pelletron particle accelerator with a negative ion source by Cesium Sputtering (SNICS) source.
According to Adhikari, the measurements of current density voltage (JV) and external quantum efficiency (EQE) were recorded before and after irradiation.
For the simulation aspect of the study, the team used the Monte Carlo simulation software Stopping Range of Ions in Matter (SRIM).
The solar cells were fabricated in a stack-based superstrate configuration as follows: fluorine-doped tin oxide (FTO) on a glass substrate, a cadmium sulfide (CdS) electron transport layer, absorbers based on Sb2S3 or Sb2(S, Se)3, a Spiro-OMeTAD transport layer, and gold (Au) back contacts.
Their initial energy conversion efficiency was 6% to 8% before the bombardment. To predict the end-of-life (EoL) performance of the devices in space conditions, the team used EoL-PCE calculations and displacement damage dose analysis (DDD). They analyzed the conservation of JV parameters as a function of DDD for both Sb2S3 and Sb2(S, Se)3 devices.
The team then compared the thin-film solar cells with the most modern III-V devices, with and without shielding. The initial PCE of these devices ranged from 28% for three-junction devices to 32% for four-junction devices.
The results of the DDD analysis and EoL-PCE simulations indicated that Sb2S3-based solar cells could be exposed to high proton exposure environments.
The devices showed “superior radiation robustness” compared to the III-V devices, with higher residual factors of JV parameters retained after exposure to DDD up to 1013 MeV/g. The results for Sb2(S, Se)3 solar cells showed similar tolerance to that of Sb2S3-based solar cells up to a fluence of 1014 protons/cm2.
The researchers noted the “robust tolerance” and “great potential of antimony chalcogenide solar cells for future space PV applications.” But they also noted the limitation of thin-film technology, its “inferior” PCE performance compared to III-V technology.
“To become more competitive for future space missions, a greater research effort is needed to overcome the efficiency barrier and develop new strategies such as bandgap engineering, interface optimization and tandem integration,” they emphasized.
The work appears: “Assessment of the proton radiation hardness of antimony chalcogenide solar cells”, published by Solar RRL.
Looking ahead, the researchers aim to “further increase the efficiency of antimony chalcogenide solar cells using new deposition techniques,” Adhikari said.
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