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Home - Technology - Researchers use guanidinium thiocyanate to increase perovskiet cell efficiency – PV Magazine International
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Researchers use guanidinium thiocyanate to increase perovskiet cell efficiency – PV Magazine International

solarenergyBy solarenergyAugust 29, 2025No Comments5 Mins Read
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Researchers have used guanidinium thiocyanate as a chaotropic means of modulating the crystal growth rate during perovskiet crystallization. They compared different concentrations of the Guanidinium thiocyanate. Champion Device Efficiency was 22.34%.

August 29, 2025
Lior Kahana

A research team led by scientists from the University College London in the United Kingdom has easily used salt to improve the performance of Tin-Lead (SN-PB) Perovskiet solar cells. The salt, Guanidinium thiocyanate (GASCN), was used as a chaotropic agent that modulated the crystal growth rate during perovskiet crystallization.

“Our approach offers a simple, effective way to improve the perovskite quality during production, delivering solar cells that are both higher and more stable, important requirements for commercial success,” said similar author Tom Macdonald in a statement from the university. Co-author Chieh-Ting Lin added that “it opens the door for refining the structure of perovskites for high-quality tandem solar cells, with the potential to significantly push the boundaries of efficiency.”

Chaotropic agents such as Gascn explained the team, disrupting the structure of secondary bonds such as Lewis Zuur -Base interactions in the precursor solution. Different GASCN concentrations were tested in this study, namely 5%, 10%and 20%. They were applied to SN -PB Perovskiet, usually the bottom layer of a tandem cell. Moreover, a reference cell, with 0% gas, was also tested, together with two other additives, namely guanidinium iodide (GAI) and sodium thiocyanate (NASCN).

“We hebben een one-stappen antisolvent-techniek gebruikt om een ​​​​smal-bandgap gemengde SN-PB perovskite, cs₀.₀₂₅fa₀.₄₇₅ma₀.₅sn₀.₅pb₀.₅i₂.br₀.₀₇₅.₀₇₅. ₀₇₅br₀.₀₇₅br₀.₀₇₅ van de voorlopers (dMFF/ dimethylformamide en dimethylformamide (DMFF/ DMFF/ Dimethyl formation and dimethylformamide and dimethylformamide and dimethylformamide and dimethylformamide and dimethylformamide and dimethyl formation and dimethyl formation and dimethyl formation and dimethyl formation and dimethyl and dimethyl and dimethyl and dimethyl and dimethyl and dimethyl and dimethyl and dimethyl and dimethyl and dimethyl and Dimethyl formation and dimethyl formation and dimethyl formation and dimethyl formation and dimethyl formal and dimethyl formal have not been deposited.

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The Crystallization Path

Image: University College London, Journal of the American Chemical Society, CC by 4.0

The total active area of ​​the device of the cell with one junction was 0.18 cm2 and the mask drainage area was 0.1 cm2. Its structure consisted or glass ash substrate, indium tin oxide (ito) axle transparent conducting electrode, poly (3.4 ethyledioxythene)-poly (styrenesulfonate) (pedot: pss) as the hole transport layer, layer, layer, layer, layer, layer, Fullerene (C₆₀) AS Electron Transport Layer (ETL), BathocuProine (BCP) as a buffer layer a silver (AG) as a TP electrode. This resulted in a structure of glass/ito/pedot: PSS/Perovskite/C60/BCP/AG.

“The Champion Control devices achieved a power conversion efficiency (PCE) of 19.12%, short-circuit current density (JSC) of 30.92 MA CM-2, open circuit voltage (VOC) of 0.81 V, and a filling factor (FF) of 76.29%. In contrast to 10, a JSCN Gascn, a JSCN Gascn, a JSCN, a JSCN of Gascn, a JSCN, a JSCN of Gascn, a JSCN, a JSCN of Gascn of Gascn, a JSCN, a JSCN of Gascn of Gascn, a JSCN, a JSCN from 10.29%of Gascn, a JSCN from 10.29%of Gascn of Gascn, A JSCN from 10.29%of Gascn of Gascn, A JSCN from 10.29%. Cm – 2, 22.84%, 22.84 MA cm – 2, always add a PCE of 22.34%, A JSC or 31. A VOC of 0.87 V and an FF of 80.02%, “the results showed. “All PV parameters systematically improved as the GASCN concentration increased from 0%to 10%, but when the concentration continued to 20%.”

While it achieved the highest PCE of 22.34%with Gascn, it achieved 15.4%with GAI with GAI and received the use of NASCN 18.13%. In order to further explore the origin of the high performance of the GASCN addition, the team used photoluminescence (PL) to observe the perovskite crystallization process in real -time.

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“This work gave us valuable insight into the crystal formation process. By modulating it in a controlled way, we were able to create much higher quality films-a change that immediately translates into more efficient and long-term devices,” said first author Yueyao Dong. “Real-time in situ PL measurements revealed that Gascn promoted the crystal growth rate and promoted the formation of homogeneous and high-quality perovskiet films. In particular, the temporary increase in PL intensity during the Cooldown process has the crucial importance of the ultimate importance of the ultimate importance of the determination of the ultimate importance of determining the ultimate importance of the ultimate importance of the ultimate-alto-alto-alto-alto-alto-alto-alto-alto-alto-alto way determination of the ultimate importance of determining the ultimate-alto-alto-alphabes.”

They presented the results in “Crystal growth modulation of tin -leadhalogenide perovskites via chaotropic agentPublished in the Journal of the American Chemical Society. Researchers from the University College London, Queen Mary University of London, London South Bank University, National Chung Hsing University in Taiwan and the University of Washington in the United States participated in the study.

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