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Home - Solar Industry - Topcon Solar cell built with silver doped nickel metallization achieved 23.66% efficiency
Solar Industry

Topcon Solar cell built with silver doped nickel metallization achieved 23.66% efficiency

solarenergyBy solarenergyMay 21, 2025No Comments3 Mins Read
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Scientists in Turkiye claim that they have developed a nickel-based topcon sun cell with a minimum silver content and almost the same efficiency as completely silver metallized counterparts. The device uses a new nickel contact method that requires a trail of silver of only 0.5 mg/w.

May 21, 2025
Emiliano Bellini

A group of researchers at the ODTU-Gunam Research Institute in Turkiye claims to have manufactured a topcon sun cell with a nickel (NI) contact and considerably lower silver (AG) content, where the device has achieved almost the same efficiency as topcon devices produced through full silver metallization.

“Silver scarcity is a growing concern like the appetite of solar production for these precious metals,” the corresponding author of the research, Veysel not self -evident, told PV -Magazine. “Our team of ODTU-Gunam and Necmettin Erbakan University have taken on this challenge by pioneering a new nickel-based contact method that only uses a trail of silver under 0.5 mg per watt, a small fraction of the approximately 13-20 mg/w used in standard silver contacts.”

“Impressive, our N-Topcon Silicon Solar cells achieved 23.66% efficiency, almost the same as the 23.71% efficiency achieved by traditional all-silver contacts,” continued. “By dramatically reducing the dependence on precious silver while maintaining performance, this innovation can considerably reduce costs and enable more sustainable, scalable production of solar cells.”

For the metallization process, the research team used various four types of AG-moored Ni Metal Pastes and a reference product based on aluminum (AL) and AG supplied by the German specialist Heraeus. The cells were based on M10 182 mm x 182 mm n-type waffles and had a tunnel oxide layer of silicon monoxide (SIOX) Less than 2 Nm thick and an N-doped polysilicon layer, which serves as a passivating carrier-selective contact.

The devices were also based on amorphic hydrogenated silicon nitride (A-Sinx), the scientists said they are the key to offering hydrogenation to passivating dangling bonds on the SI/SIOX interface. Oxides were used to enable the glass frit to effectively etch the anti -reflective coating (ARC) and to form a passivating intermediate layers that improve the overall contact resistance. A nickel oxide (NIO) layer was used to increase the adhesion and stability of the remaining glass layer.

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Tested under standard lighting conditions, the cell achieved a power conversion efficiency of 23.66%, an open circuit voltage of 701.1 mv, a short-circuit current of 41.5 mA/m2 and a filling factor of 81.8%. For comparison, the cell with full silver metallization achieved an efficiency of 23.71%, an open circuit voltage of 702.0 mv, a short -circuit current of 41.1 mA/m2 and a filling factor of 81.9%.

“The strategic intake of a modest 4 % silver on nickel particles, combined with a redesigned glass frit, improves conductivity and
Adhesion of contacts, while the effective selectivity of the carriers is facilitated, “the scientists emphasized.” The extensive analysis confirmed that this new approach remains a high efficiency comparable to traditional silver contacts. “

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