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Home - Technology - Tongwei achieves 31.4% Efficiency for Perovskiet-Silicon Tandem Solar PV Magazine International
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Tongwei achieves 31.4% Efficiency for Perovskiet-Silicon Tandem Solar PV Magazine International

solarenergyBy solarenergyAugust 20, 2025No Comments5 Mins Read
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Chinese researchers, led by a research team of PV Technology Center of Tongwei Co., LTD, used a consecutive glow process in the manufacture of tandem solar cells, with a wide tire gap perovskiet top cell on a fully textured commercial crystalline silicon heterojunction soerojunction. The resulting device had a certified power conversion efficiency of 31.4%, which performed better than a 29.43%-efficient control cell.

August 19, 2025
Valerie Thompson

Scientists in China, led by a research team of the PV Technology Center of Tongwei Co., LTD, a unit of Chinese vertical integrated solar manufacturer Tongwei, used a lower temperature, sequentially glowing process to manufacture two-grazing, tandem solar cells with a Wide tape on tape on-bandt Commercial Silicon Heterojunction (SHJ) Bottom Cell.

“With a carefully modulated sequential glowing process in Ambient, we obtain high-quality Wide-Bandgap Perovskiet films that are grown in accordance with fully textured silicon substrates with reduced defects and homogeneous composition distribution, which is in the performance of the best tooths of a certified power-conversion of certified-conversed-converted-conversion of certified-conversion Best tandems with a certified Power conversion (PCE) of 31.4%, which is one of the best teeth, which is between the best performance of the pce) of 31.4.4.4.4. PV Magazine.

The Tandemate Champion was certified by the National Institute of Measurement and Testing Technology (NIMTT) and by the Fujian Institute of Metrology (FJIM).

The research is described in “Crystallization modulation of broad-band gap perovskites on structured silicon for tandem solar cells‘Published in ACS Energy Letters.

Aware of the challenges of the use of a conventional two-step method for evaporation solution to form broad-band gap perovskites on commercial SHJ silicon floor cells, the research team investigated ways to overcome moisture and thermally induced complex effects on crystallization.

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The team investigated the perovskiet phase transition process to reveal the crystallization ministry of broad band gap perovskites, “clarifying the influence mechanisms of external conditions”, such as moisture and heat on film crystallization.

“To overcome the complex problem, we have developed and realized fine modulations on both organic halide diffusion and the perovskiet-herkrystallization processes. This innovative strategy made the manufacture of high-quality Wide-Bandgap Perovoskietfilmen Silicon cells with large pyramids, with large pyramids, “specified Hu-pyramids,” dried hu.

It is a strategy that has an industrial transfer potential. “The glowing process requires temperature up to 100-150 C and duration of half an hour,” said HU, in which he explained that such circumstances are “easily feasible” with established industrial glow-controlly equipment, such as tunnel ovens, “demonstrating a strong potential for process scaling scale.”

The perovskiet material for the upper cell was made of formamidinium iodide (FAI), Formamidinium bromide (Fabrie), Cesium bromide (CSBR), Plus Additives.

The SHJ sub cells were based on N-type, fully structured silicon waffles with a thickness of 110 urn. A transparent conductive oxide (TCO) coating was deposited on the back, followed by silver (AG) electrodes, and an indium tinoxide (ITO) layer was deposited at the front.

The Stack of the Pin Structured Perovskite Subcell was as Follows: Nickel-Oxide (NIOX) Hole transport Layer (HTL), 2PACZ, Lead Iodide (PBI2) Framework Layer, Perovskite Absorber, EthhydiMonideeren Diiodide Electron Transport Layer, Snox Buffer Layer, TCO, AG contacts, Lithium fluoride (LIF) Anti-reflection coating (ARC).

The energy band gap of the Perovskite films is 1.73 EV, which “meets the demand for light management for the 110 μm commercial C-silicon waffles used,” the researchers noted.

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One of the best -performing target devices was certified with an efficiency of 31.4%, an open circuit voltage of 1.905 V, a filling factor of 81.20%and a short -circuit current density of 20.30 Mon/Cm2. It performed better than the operating device that was prepared using the conventional glowing procedure, which had an efficiency of 29.43%, an open circuit voltage of 1.915 V, a filling factor of 75.67%and a short -circuit current of 20.31 MA/CM2.

Working together on the research was a team from the University of Electronic Science and Technology of China.

The team now focuses its attention on “the production of large domestic 210 tandem solar cells, industrial standard dental modules and their operational stability in the outdoors in working conditions,” said HU.

In a statement about the study, Tongwei said that his Perovskiet-silicon tandem cell research laboratory was founded in the third quarter of 2022 to industrialize tandem cells after a technological route map that is compatible with the existing production lines for hetero junction. “The focus is on overcoming important technical bottlenecks of mass production in tandem cell design, conforming film formation of the structured surface, interface passion, metallization with low temperature and module-kidney,” said it. The company also said it is planning a megawatt scale tandem pilot line that must be built this year.

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