The Japanese manufacturer said its latest power semiconductor module is based on a compact insulated gate bipolar transistor (IGBT) and is designed for large-capacity industrial power converters with a voltage of 2,300 V.
Japanese Fuji electric has launched a new high-performance module in its next-core series, based on its latest insulated-gate bipolar transistor (IGBT) platform, featuring diodes with a freewheeling diode (FWD) function.
The new HPnC
Power inverters are used in solar PV inverters and power conditioning systems.
The modules measure 100mm x 144mm x 40mm and have a rated current ranging from 1,200 A to 1,800 A depending on the model. The voltage options for this line of IGBT products are 1,700 V or 2,300 V.
The company notes that it uses the latest generation of IGBT chips with an internal terminal layout, materials and chip layout optimized for high heat dissipation to increase current density per unit area, allowing a rated current of 1,800 A in a small package . .
Fuji Electric sees an opportunity to enable the shift in solar PV systems to an array voltage of 1,500 V (DC) and the use of grid-balancing batteries.
“The 2300 V breakdown voltage product supports 1500 VDC, which contributes to the reduction of the number of parts in the power converter,” the manufacturer said, noting that if other components, such as wiring in peripheral circuits, are reduced, the new product allows for lower power. footprint of the converter.
Fuji Electric already has a reference customer for the HPnC X-series IGBT modules in the renewable energy sector, namely Vestas, the Danish wind turbine manufacturer.
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