The researchers said they have optimized the inverted perovskiet cells with low band gaps by a passivating aluminum oxide (AL2O3) interlayer deposited through atomic layer off (ALD), which has significantly improved device efficiency.
Researchers at the Indian Institute of Technology Bombay have manufactured a reverse low-band Gap Perovskiet solar cell for applications in four-terminal (4T) Perovskiet-Silicon tandem solar cells.
Reverse perovskiet cells have a device structure that is known as “Pin”, where “P” with hole-selective contact at the bottom an intrinsic perovskiet layer “I” with electron transport layer “N” at the top. Conventional halogenide perovskiet cells have the same structure but vice versa – a “NIP” layout.
In the conventional NIP architecture, the solar cell is illuminated by the electron transport layer (ETL) side; In the PIN structure it is enlightened by the surface of the hole transport layer (HTL).
“We have optimized a PIN on opaque perovskiet solar cell by the thickness of passivating aluminum oxide (AL2O3) intermediate layer deposited via atomic layout (ALD),” said the investigation of the research, “said the research of the investigation, Dineh Kabra, PV -Magazine. “We used the Al2O3 nanoparticles intermediate layer for passivating perovskiet and cargo Buckminsterfullere (C60)) Transport layer interfaces. AL2O3 layer deposits via the ALD technique has shown a large potential in the passivating of active layers and full incoming of appliance stacks. “
The scientists designed the cell with a substrate made of glass and indium tinoxide (ITO), a hole transport layer (HTL) made from a phosphonic acid called methyl substiTuted carbazole (me-4pacz), A PEROVSKIT -ABSORBER with an energy band of 1.67 EV, the Al2O3 -Interlayer, the C60 Etl, A buffer layer of a Bathocuproine (BCP) and a silver (AG) metal contact.
They used a “optimized” 3 Nm-Denkt Al2O3 Interlayer, which reportedly helped to increase cell efficiency from 17.09% to 19.16% and the filling factor from 71.44% to 77.36% compared to a reference cell without the Al2O3 interlayer.
With this configuration, the research group built a cell with an active area of 0.175 cm2 and an efficiency of 18.77%, as well as a device with an active area of 1.08 cm2 and an efficiency of 16.92%.
Both devices were then integrated in a 4T perovskiet-silicon tandem cell with a soil silicon device with an efficiency of 25.5%, an open circuit voltage of 0.720 V, a short-circuit current density of 4209 MA/CM2 and a filling factor of 84.15%.
Tested under standard conditions, the tandem cell with the 0.175 cm2 upper perovskiet device achieved an efficiency of 29.14%, while the tandem cell achieved an efficiency of 26.86%with the help of the 1.08 cm top cell.
“We have successfully demonstrated 4-T Perovskiet-Silicon Tandem solar cells with efficiency of more than 26 % more than 1 cm2 active area,” said Kabra. “There is a potential for further improvement in the performance of the tandem cells by incorporating an optical link between the upper and soil cells that can improve near-infrared (NIR) transmission.
The cell was described in detail in the study “Optimization of almost infrared transparent pi-N Perovskiet solar cells with active area> 1 cm2 For four-terminal perovskiet/si tandem solar cells“Published in RRL Solar.
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