A research group in India has embedded a hybrid heterojunction solar cell as a lower device in a four-terminal perovskiet-silicon solar cell with the help of a solution processing technique. According to its makers, the new cell architecture could be produced at considerably lower costs compared to conventional Perovskiet-Silicon Tandem.
A group of researchers led by the Indian Institute of Technology Roorkee has proposed to use hybrid heterojunction solar cells (HHSCs) as soil devices in four-terminal (4T) Perovskiet-Silicon Tandem PV cells.
The scientists explained that HHSCs have a simple structure and manufacturing processes for low temperatures, while they also show “promising” efficiency. “These HHSCs are intended to eliminate up to 35 % of the energy consumption during the production of solar cells and to use the benefits of both functional low and SI materials in a cost-effective approach,” they stated, and noted that these cells are based on carrier-selective layers that are on Molybdenumoxide (beautiful). Poly (3-hexylthiophen) (P3HT).
For their new HHSC architecture, the research team opted for Pedot: PSS, a polymer that is known for its cheap and easy preparation. It was manufactured with a silver (AG) metal contact, a structured N-type silicon (N-Si) Absorber coated with pedot: PSS and an indium gallium (in: GA) interface. The power conversion -efficiency reached 10.92% and the filling factor was 66.04%.
It is claimed that the structured surface of the N-Si absorber reduces the surface reflection and at the same time offers saw and damage-free smooth surface and an increased junction surface, which is crucial for high quality and efficient pedot: PSS/N-Si Junction formation. “The addition of ethylene glycol in the pedot: PSS improves its electrical conductivity and induces a strong inversion layer at Pedot: PSS/N-SI interface near the N-SI surface,” said the group, and noted that the cell was prepared with the help of a technique for processing solutions.
The upper perovskiet device was constructed with a transparent fluorine-doted tinoxide (FTO) substrate, a hole transport layer (HTL) made of nickel (II) oxide (NIOX), a perovskiet-absorber, an electron transport layer (ETL) based on Fenyl-C61-Boteric acid methylester (PCBM) and Molybdenen -Trioxide (MOO3)an RH101 buffer layer, a silver (AG) metal contact.
The academics explained that it has measured the energy band gap and the transparency of the upper perovskiet cell to increase light absorption and efficiency of the power conversion. The wide tire gap -light -absorbing layer of the upper cell was based on a perovskiet material known as CS0.1FA0.9Pbi2Br. “The upper Perovskiet subcel absorbs the short wavelength photons that are applied to the device and send the remaining photons through and fall on the subcel of the silicon floor, making the light absorption maximized,” they added.
A detailed report on the new cell concept is available in the paper “Solution Processable Perovskiet-Hybrid Heterojunction Silicon 4T Tandem solar cells“Which was recently published in Material stoday progress. The research team included academics from the Indian CSIR-National Physical Laboratory.
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