Browsing: IIIV
Fraunhofer scientists have announced two efficiency records for III-V tandem modules. The team says its III-V germanium PV module with…
The PV device is based on an indium gallion phosphid -absorber with an energy band gap of 1.9 EV. It…
Fraunhofer ISE researchers say that their newly manufactured Galliumarenide substrates (INP-on-Gaas waffles) can replace Prime Indium phosphid waffles and offer…
The proposed cell is based on indium gallium phosphide (InGaP), indium gallium arsenide (InGaAs) and germanium (Ge) and has an…